The Samsung K4X1G163PE-8GC6 is a 1 Gbit Mobile DDR SDRAM component designed for low-power, high-performance applications. It is particularly suited for mobile devices and other applications where power consumption is a critical factor.

Applications

• Smartphones
• Tablets
• Portable Gaming Devices
• Automotive Infotainment Systems
• Digital Cameras

Features

• 1Gbit (64M x 16) memory density
• Mobile DDR (LPDDR) interface for low power consumption
• Operating frequency up to 400 MHz
• Double data rate architecture
• Clock enable (CKE) power-down mode
• Partial Array Self Refresh (PASR) for efficient power management
• Deep Power Down (DPD) mode

Benefits

• Extended battery life in mobile devices
• High-speed data access for demanding applications
• Reduced system power consumption
• Optimized memory performance for mobile environments
• Reliable operation in a wide range of temperatures

Technical Specifications

The K4X1G163PE-8GC6 operates at a voltage of 1.8V/1.2V. It supports burst lengths of 2, 4, 8, and 16. The chip incorporates a 16-bit prefetch architecture to enable high-speed data transfer. It adheres to JEDEC standards for Mobile DDR SDRAM. The component is available in a FBGA (Fine-pitch Ball Grid Array) package. The operating temperature range is typically between -25°C and 85°C.

This Mobile DDR SDRAM device offers a reliable and power-efficient memory solution for various mobile applications. Its low power consumption and high-speed data transfer capabilities make it a suitable choice for battery-powered devices.