The Samsung K4T51163QI-HIE6T00 is a high-performance DDR3 SDRAM (Synchronous Dynamic Random-Access Memory) component designed for applications demanding significant memory bandwidth and capacity. It provides high-speed data transfer and efficient power consumption, making it suitable for various computing systems.

Applications:

• Desktop computers
• Laptop computers
• Gaming consoles
• Graphics cards
• Networking equipment

Features:

• DDR3 technology for high-speed data transfer
• 512Mb (32M x 16) memory organization
• Operating Voltage: 1.5V
• Data transfer rates up to 1600 Mbps
• RoHS compliant
• FBGA package for compact size and improved thermal performance

Benefits:

• Improved system performance due to fast memory access
• Enhanced multitasking capabilities with high memory capacity
• Enhanced gaming and graphics performance
• Reduced power consumption compared to DDR2 SDRAM
• Increased reliability and stability in demanding applications

Additional Details:

The K4T51163QI-HIE6T00 incorporates advanced features such as Write Leveling, On-Die Termination (ODT), and Dynamic Calibration to optimize signal integrity and power efficiency. These features contribute to the overall stability and reliability of the memory subsystem. The FBGA package allows for compact integration into various system designs. Manufactured using advanced semiconductor technology, this DDR3 SDRAM component provides high performance and long-term reliability in demanding computing environments.