The Samsung K4T1G163PE-FGC6 is a 1Gb (Gigabit) DDR3 SDRAM (Double Data Rate Three Synchronous Dynamic Random-Access Memory) chip. This component is designed for applications that require high-speed and efficient memory performance.

Applications

• Desktop and laptop computers
• Gaming consoles
• Networking equipment
• Embedded systems
• Graphics cards

Features

• 1Gb (64M x 16) memory organization
• DDR3 architecture
• Data transfer rates up to 1600 Mbps (PC3-12800)
• 8 internal banks for concurrent operation
• 8-bit prefetch architecture
• Programmable burst length: 4, 8
• Automatic and self-refresh capabilities
• On-die termination (ODT)
• Operating voltage: 1.5V
• Lead-free package

Benefits

• Improved system performance due to high bandwidth
• Reduced power consumption compared to DDR2
• Enhanced signal integrity with ODT
• Increased memory capacity for demanding applications

Additional Details

The K4T1G163PE-FGC6 is packaged in a FBGA (Fine-pitch Ball Grid Array). The DDR3 architecture provides a significant performance increase over DDR2 while consuming less power. Its compatibility with JEDEC standards ensures that it can be integrated into a wide variety of systems. The FGC6 denotes the specific speed grade and timings supported. The on-die termination (ODT) feature improves signal integrity, reducing reflections and noise on the memory bus, which enhances the reliability of data transfer. Automatic and self-refresh capabilities help maintain data integrity without requiring constant external intervention.