The K4H510438D-UCB3 is a 512Mb DDR SDRAM (Double Data Rate Synchronous Dynamic Random-Access Memory) chip manufactured by Samsung. It's designed for use in a variety of applications requiring high-speed data access and storage.
Applications
- PC Main Memory
- Graphics Cards
- Networking Devices (Routers, Switches)
- Embedded Systems
- Gaming Consoles
- Digital TVs
Features
- 512Mb (64M x 8) memory organization
- Double Data Rate (DDR) architecture: two data transfers per clock cycle
- Data rate up to 400 Mbps (depending on the specific variant)
- Single 2.5V (±0.2V) power supply
- Differential clock inputs (CK and /CK)
- Double-data-rate interface
- 8 internal banks for concurrent operation
- Auto precharge option for single row access
- Burst Length: 2, 4, 8
- CAS Latency (CL): 2, 2.5, 3
- Package: FBGA (Fine-pitch Ball Grid Array)
Benefits
- High-speed data transfer for improved system performance.
- Efficient memory utilization with 8 internal banks.
- Reduced power consumption with a single 2.5V supply.
- Simplified memory controller design with double-data-rate interface.
- Compact footprint with FBGA package.
Additional Details
The K4H510438D-UCB3 is a DDR SDRAM chip compliant with the JEDEC standard. It operates at a clock frequency up to 200 MHz, achieving a data rate of up to 400 Mbps. The refresh cycle is typically 8 refresh cycles every 64 ms. It supports burst read and write operations for efficient data access. The device incorporates an auto precharge function that automatically prepares the next row for access after a burst operation. The FBGA package provides a compact footprint and excellent thermal performance. The operating temperature range is typically 0°C to +70°C. The specific timing parameters (e.g., tRCD, tRP, tRAS) are defined in the datasheet and must be adhered to for proper operation. It's a mature memory technology widely used in various applications. The chip is lead-free and RoHS compliant. This memory module allows for high speed access to memory for increased processing capabilites.