The Samsung K4A8G165WC-BITD is an 8Gb DDR4 SDRAM (Double Data Rate 4 Synchronous Dynamic Random-Access Memory) component designed for high-performance computing and memory-intensive applications. Its advanced features and specifications make it suitable for use in various devices and systems.

Applications

• High-End Desktop PCs
• Gaming PCs
• Workstations
• Servers
• Networking Infrastructure

Features

• 8Gb Density: Provides a high memory capacity for demanding applications and heavy workloads.
• DDR4 Technology: Utilizes DDR4 technology for significantly faster data transfer rates and improved performance compared to previous DDR generations.
• Low Voltage Operation: Operates at a low voltage to reduce power consumption and heat generation.
• High Bandwidth: Supports high memory bandwidth for improved system responsiveness and faster data processing.
• Advanced Packaging: Employs advanced packaging techniques for enhanced signal integrity and thermal performance.

Benefits

• Improved System Performance: Enhances application loading times, multitasking capabilities, and overall system responsiveness.
• Increased Energy Efficiency: Reduces power consumption, leading to longer battery life in portable devices and lower energy costs in desktop systems.
• Enhanced Gaming Experience: Delivers smoother frame rates, reduced lag, and improved visual fidelity in demanding games.
• Greater Stability: Provides a stable and reliable memory solution for critical applications and heavy workloads.
• Optimized for Demanding Applications: Designed to handle memory-intensive tasks such as video editing, 3D rendering, and scientific simulations.

Technical Specifications

The K4A8G165WC-BITD operates at a specific voltage (typically 1.2V) and conforms to JEDEC standards for DDR4 SDRAM. Consult the official Samsung datasheet for detailed specifications, including timings (CAS latency, RAS to CAS delay, RAS precharge time), operating temperature range, and other critical parameters for optimal system integration.