The 2SC5928 is a silicon NPN epitaxial planar transistor manufactured by Panasonic. It's designed for use in high-frequency power amplifier applications.
Applications:
- VHF and UHF power amplifiers
- High-frequency oscillators
- RF communication equipment
Features:
- High power gain
- Low noise figure
- High transition frequency (fT)
- Excellent linearity
- Epitaxial planar structure for reliability
Benefits:
- Enables efficient power amplification in high-frequency circuits.
- Contributes to improved signal clarity in communication systems.
- Facilitates the design of low-noise RF front-ends.
- Provides stable performance over a wide range of operating conditions.
- Offers a compact and reliable solution for RF power amplification needs.
Technical Specifications:
While specific values may vary based on datasheet revisions and testing conditions, typical parameters include:
- Collector-Base Voltage (VCBO): Typically around 60V
- Collector-Emitter Voltage (VCEO): Typically around 30V
- Emitter-Base Voltage (VEBO): Typically around 4V
- Collector Current (IC): Typically around 2A
- Collector Dissipation (PC): Varies based on package and heat sinking, consult datasheet
- Transition Frequency (fT): Typically around 1 GHz or higher
- Current Gain (hFE): Varies, typically between 20 and 100
For accurate and up-to-date specifications, consult the official Panasonic datasheet for the 2SC5928.