The 2SC5928 is a silicon NPN epitaxial planar transistor manufactured by Panasonic. It's designed for use in high-frequency power amplifier applications.

Applications:

• VHF and UHF power amplifiers
• High-frequency oscillators
• RF communication equipment

Features:

• High power gain
• Low noise figure
• High transition frequency (fT)
• Excellent linearity
• Epitaxial planar structure for reliability

Benefits:

• Enables efficient power amplification in high-frequency circuits.
• Contributes to improved signal clarity in communication systems.
• Facilitates the design of low-noise RF front-ends.
• Provides stable performance over a wide range of operating conditions.
• Offers a compact and reliable solution for RF power amplification needs.

Technical Specifications:

While specific values may vary based on datasheet revisions and testing conditions, typical parameters include:

• Collector-Base Voltage (VCBO): Typically around 60V
• Collector-Emitter Voltage (VCEO): Typically around 30V
• Emitter-Base Voltage (VEBO): Typically around 4V
• Collector Current (IC): Typically around 2A
• Collector Dissipation (PC): Varies based on package and heat sinking, consult datasheet
• Transition Frequency (fT): Typically around 1 GHz or higher
• Current Gain (hFE): Varies, typically between 20 and 100

For accurate and up-to-date specifications, consult the official Panasonic datasheet for the 2SC5928.