The ON Semiconductor P2560BF-08SR is a high-performance N-Channel Metal-Oxide Semiconductor Field-Effect Transistor (MOSFET) designed to deliver efficient power management and conversion for a wide range of applications. This robust semiconductor device is a perfect choice for engineers looking to optimize their power circuits in terms of both efficiency and reliability.
Key Features
- Low On-Resistance: The P2560BF-08SR offers exceptionally low on-resistance, which translates to reduced losses and improved efficiency in power applications.
- High Switching Speed: With its fast switching capabilities, this MOSFET is ideal for high-frequency applications, ensuring minimal power loss and heat generation.
- High Current Capability: This device is capable of handling high continuous drain currents, making it suitable for applications requiring robust current handling.
- Thermal Performance: The P2560BF-08SR is designed with superior thermal characteristics, ensuring reliable operation even under high temperature conditions.
Applications
The ON Semiconductor P2560BF-08SR N-Channel MOSFET is versatile and can be used in various applications, including:
- Power Supply Circuits
- DC-DC Converters
- Motor Drives
- Automotive Applications
- Switch Mode Power Supplies (SMPS)
Product Specifications
| Parameter |
Value |
| Drain-Source Voltage (VDS) |
80V |
| Continuous Drain Current (ID) |
256A |
| Power Dissipation (PD) |
375W |
| RDS(on) |
0.8mΩ |
| Package |
Surface-Mount |
The P2560BF-08SR from ON Semiconductor is a testament to the company's commitment to providing advanced solutions for power management challenges. With its outstanding electrical characteristics and thermal performance, this MOSFET is a reliable and efficient choice for modern electronic designs.