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NCD5700DR2G

Part No NCD5700DR2G
Manufacturer ON Semiconductor
Catalog PMIC - Gate Drivers
Description HIGH CURRENT IGBT GATE DRIVER
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Integrated Circuits (ICs) - Power Management (PMIC) - Gate Drivers
Mfr onsemi
Series -
Package Tape & Reel
Product Status Active
Driven Configuration High-Side or Low-Side
Channel Type Synchronous
Number of Drivers 2
Gate Type IGBT
Voltage - Supply 12.5V ~ 20V
Logic Voltage - VIL, VIH 0.75V, 4.3V
Current - Peak Output (Source, Sink) 7.8A, 6.8A
Input Type Inverting
Rise / Fall Time (Typ) 9.2ns, 7.9ns
Temperature Range - Operating -40°C ~ 125°C (TA)
Mounting Type Surface Mount
Package / Case 16-SOIC (0.154", 3.90mm Width)
Supplier Device Package 16-SOIC
Base Product Number NCD5700
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8542.39.0001
Win Source Part Number 1372488-NCD5700DR2G
Ultra Librarian 3D Model Ultra Librarian NCD5700DR2G CAD Model

Description

The NCD5700DR2G is a high-performance, isolated IGBT gate driver designed and manufactured by ON Semiconductor, a leading provider in the semiconductor industry. This advanced component is engineered to provide efficient, reliable, and safe driving of IGBTs and power MOSFETs, particularly in applications where high-speed switching and isolation are critical requirements.

Key Features

  • High Isolation Voltage: The NCD5700DR2G boasts an impressive isolation voltage of 5kVrms (min), providing excellent electrical isolation between the input and output, which is essential for safety and noise immunity in high-voltage applications.
  • Fast Propagation Delays: With typical propagation delays of just 120ns, this driver ensures quick response times, enabling high-speed switching that can improve efficiency and reduce switching losses in power converters.
  • Robust Gate Drive: It provides a strong drive capability, with source and sink currents of 2A (min), ensuring that the connected IGBT or MOSFET is driven hard into saturation or fully turned off, minimizing transition losses.
  • Integrated Desaturation Detection: The device includes a desaturation detection feature that helps protect the power switch from overcurrent conditions, enhancing system reliability.
  • Under-Voltage Lockout (UVLO): The UVLO function ensures that the gate driver operates only when there is sufficient supply voltage, preventing malfunction or damage to the IGBT or MOSFET due to insufficient gate voltage.
  • Wide Operating Temperature Range: Designed to perform in a broad range of environmental conditions, the NCD5700DR2G operates effectively within a temperature range of -40°C to +125°C.
  • Compact SOIC-8 Package: The device is available in a small outline integrated circuit (SOIC-8) package, which is ideal for space-constrained applications while providing adequate thermal performance.

Applications

The NCD5700DR2G is suitable for a variety of applications where high efficiency and reliability are paramount. These include industrial inverters, solar power inverters, uninterruptible power supplies (UPS), motor drives, and high-voltage power conversion systems.

Conclusion

With its combination of high isolation, fast switching, robust driving capabilities, and protective features, the NCD5700DR2G from ON Semiconductor represents a reliable solution for driving power switches in high-performance electrical systems. Its compact form factor and wide operating temperature range further ensure its versatility in a multitude of demanding applications.

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