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Categories Integrated Circuits
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Active
Driven Configuration Low-Side
Channel Type Independent
Number of Drivers 2
Gate Type N-Channel MOSFET
Supply Voltage - Operating 6.1 V to 18 V
Logic Voltage - VIL, VIH 0.8V, 2.6V
Current - Peak Output (Source, Sink) 1.5A, 1.5A
Input Type Non-Inverting
Rise and Fall Time 36ns, 32ns
Temperature Range - Operating -40°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SOIC
Win Source Part Number 003347-MC33152DR2G
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Sufficient
Family Name MC33152
Introduction Date January 15, 1997
ECCN EAR99
Country of Origin Philippines
Halogen Free Compliant
Estimated EOL Date 2028
Ultra Librarian 3D Model Ultra Librarian MC33152DR2G CAD Model

Description

ON Semiconductor MC33152DR2G High-Speed Dual MOSFET Drivers

The MC33152DR2G, manufactured by ON Semiconductor, is a high-performance dual non-inverting MOSFET driver designed for applications requiring efficient power management and fast switching capabilities. This integrated circuit is specifically engineered to convert low power input signals into high current drives with minimal delay and rise time, making it an ideal component for a variety of power conversion and control applications.

Encased in a compact 8-SOIC package, the MC33152DR2G offers a robust solution for driving MOSFETs and IGBTs. It is capable of delivering peak output currents of up to 1.5 A, ensuring that connected power transistors are fully and quickly enabled, which is crucial for high-speed switching operations. The device operates over a wide supply voltage range from 4.5 V to 18 V, making it versatile for use in different circuit configurations and systems.

The MC33152DR2G features an efficient dual-channel design, which allows for the simultaneous or independent control of two MOSFETs. This is particularly useful in push-pull or half-bridge configurations where synchronized switching is required. The driver's fast propagation delays and short rise and fall times, typically 25 ns, contribute to reduced switching losses and improved overall system efficiency.

Built with protection in mind, the MC33152DR2G includes features such as matched propagation delay for both channels, which helps to minimize the risk of cross-conduction and shoot-through in bridge applications. Additionally, the driver incorporates under-voltage lockout protection to ensure that the device operates only when the supply voltage is within the specified range, thereby safeguarding the MOSFETs and the load from potential damage caused by insufficient gate voltage.

Applications for the MC33152DR2G are diverse and include switch-mode power supplies, DC-DC converters, motor controllers, and class D switching amplifiers. Its reliability and performance make it a preferred choice for designers looking to optimize their power management systems for speed, efficiency, and robustness.

ON Semiconductor's commitment to quality ensures that the MC33152DR2G meets the rigorous standards required for industrial and commercial electronic devices, providing a reliable solution for high-speed MOSFET driving needs.

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Pricing & Ordering

Quantity Unit Price Ext. Price
70+ $0.7155 $50.0850
175+ $0.5871 $102.7425
265+ $0.5687 $150.7055
365+ $0.5504 $200.8960
470+ $0.5321 $250.0870
630+ $0.4770 $300.5100
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
Availability: 31,500 pieces
MOQ: 70 pcs
Order Increment : 1 piece
*Need More Quantity? *Request a Bulk Quantity Quotation?

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