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MBR1045MFST3G

Part No MBR1045MFST3G
Manufacturer ON Semiconductor
Catalog Diodes, Rectifiers - Single
Description DIODE SCHOTTKY 45V 10A 5DFN / Diode Schottky 45 V 10A Surface Mount 5-DFN (5x6) (8-SOFL)
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Diodes - Rectifiers - Single
Manufacturer onsemi
Packaging Reel - TR
Diode Type Schottky
Voltage - DC Reverse (Vr) (Max) 45 V
Current - Average Rectified (Io) 10A
Voltage - Forward (Vf) (Max) @ If 750 mV @ 20 A
Speed Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr 500 µA @ 45 V
Mounting Surface Mount
Case / Package 8-PowerTDFN, 5 Leads
Supplier Device Package 5-DFN (5x6) (8-SOFL)
Operating Temperature - Junction -55°C ~ 150°C
Base Product Number MBR1045
RoHS Status ROHS3 Compliant
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.10.0080
Other Part Number ONSONSMBR1045MFST3G,2156-MBR1045MFST3G-OS
Standard Package 5,000
Win Source Part Number 1325603-MBR1045MFST3G
Ultra Librarian 3D Model Ultra Librarian MBR1045MFST3G CAD Model

Description

ON Semiconductor MBR1045MFST3G Schottky Barrier Rectifier

The MBR1045MFST3G from ON Semiconductor is a high-performance Schottky barrier rectifier designed for applications requiring low voltage drop and high efficiency. This power rectifier is well-suited for use in a wide range of electronic circuits, including power supplies, inverters, and DC/DC converters, where it provides a reliable solution for rectification and freewheeling operations in switch-mode power supplies.

This device features a maximum repetitive reverse voltage (VRRM) of 45V and a non-repetitive peak reverse voltage (VRSM) of the same value, making it suitable for medium voltage requirements. It has a high forward surge current (IFSM) of 150A, which is critical for handling high transient currents without failure. The average rectified forward current (IF(AV)) is rated at 10A, which allows for a significant amount of current to flow through the device during normal operation.

The MBR1045MFST3G is designed with a low forward voltage drop (VF), typically 0.70V at IF = 5A, which enhances its efficiency by reducing power loss during conduction. This characteristic is particularly beneficial in applications where power conservation is critical. Additionally, the device boasts a fast switching speed, which minimizes switching losses and improves the overall performance of the power circuit.

ON Semiconductor's MBR1045MFST3G comes in a surface-mount package, specifically the D2PAK (TO-263) form factor, which provides a compact footprint and is suitable for automated assembly processes. The device is also characterized by its robust construction, with a guard ring for enhanced ruggedness and long-term reliability.

The Schottky barrier rectifier is RoHS compliant, ensuring that it meets current environmental standards by not containing hazardous substances. It is designed for high-temperature operation, with a junction temperature range from -65°C to +150°C, which makes it an excellent choice for challenging thermal environments.

Overall, the MBR1045MFST3G is a versatile and durable component that offers designers a balance of efficiency, power handling, and reliability for their power management applications.

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