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AFGHL75T65SQDT

Part No AFGHL75T65SQDT
Manufacturer ON Semiconductor
Catalog IGBTs - Single
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - IGBTs - Single
Mfr onsemi
Series Automotive, AEC-Q101
Package Tube
IGBT Type Trench Field Stop
Voltage - Collector Emitter Breakdown (Max) 650 V
Current - Collector (Ic) (Max) 80 A
Current - Collector Pulsed (Icm) 300 A
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 75A
Power - Max 375 W
Switching Energy 2.12mJ (on), 1.14mJ (off)
Input Type Standard
Gate Charge 136 nC
Td (on/off) @ 25°C 24ns/106ns
Test Condition 400V, 75A, 4.7Ohm, 15V
Reverse Recovery Time (trr) 75 ns
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Package / Case TO-247-3
Supplier Device Package TO-247-3
Base Product Number AFGHL75
Other Names 488-AFGHL75T65SQDT
Standard Package 30
MSL Level Not Applicable
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277401-AFGHL75T65SQDT
Ultra Librarian 3D Model Ultra Librarian AFGHL75T65SQDT CAD Model

Description

Product Overview: AFGHL75T65SQDT

The AFGHL75T65SQDT is a cutting-edge power semiconductor device from ON Semiconductor, a leading provider in the industry known for its high-quality and reliable products. This particular device is part of their silicon carbide (SiC) MOSFET family, which is designed to offer superior performance in applications requiring high efficiency, fast switching, and high-temperature operation.

Key Features

  • High Performance: With silicon carbide technology, the AFGHL75T65SQDT provides significantly lower on-resistance and reduced switching losses compared to traditional silicon MOSFETs.
  • High Temperature Operation: This device can operate at higher temperatures than standard silicon devices, making it ideal for demanding environments.
  • Fast Switching Speed: The fast switching capability of the AFGHL75T65SQDT leads to improved efficiency and performance in power conversion systems.
  • Robustness: ON Semiconductor's SiC MOSFETs are known for their durability and robustness, ensuring long-term reliability.

Applications

The AFGHL75T65SQDT is suitable for a wide range of high-performance applications, including:

  • Electric vehicle (EV) chargers
  • Uninterruptible power supplies (UPS)
  • Industrial power supplies
  • Renewable energy systems
  • Power factor correction (PFC) circuits

Technical Specifications

Parameter Value
Drain-to-Source Voltage (VDS) 650V
Continuous Drain Current (ID) 75A
Total Gate Charge (Qg) Typ. 220nC
Max Junction Temperature (Tj) 175°C
Package TO-247

Conclusion

The AFGHL75T65SQDT from ON Semiconductor is an excellent choice for designers looking for a high-performance, reliable, and efficient power MOSFET. Its advanced silicon carbide technology ensures it meets the needs of the most demanding applications, offering a combination of high efficiency, fast switching speeds, and high-temperature operation that is hard to match.

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Pricing & Ordering

Quantity Unit Price Ext. Price
5+ $11.7910 $58.9550
10+ $11.0448 $110.4480
15+ $10.6717 $160.0755
21+ $9.9254 $208.4334
27+ $9.5523 $257.9121
33+ $9.1791 $302.9103
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 5,000 pieces
MOQ: 5 pcs
Order Increment : 1 pcs
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