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MT9VDDT6472HY-40BF2

Part No MT9VDDT6472HY-40BF2
Manufacturer Micron Technology Inc.
Catalog Memory - Modules
Description MODULE DDR SDRAM 512MB 200SODIMM
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Memory Cards, Modules
Manufacturer Micron Technology Inc.
Part Status Obsolete(EOL)
Memory Type DDR SDRAM
Memory Size 512MB
Speed 400MT/s
Package 200-SODIMM
Manufacturer Homepage www.micron.com
Win Source Part Number 755243-MT9VDDT6472HY-40BF2
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Family Name MT9VDDT6472H
Introduction Date June 21, 2002
ECCN EAR99
Estimated EOL Date Obsolete
Ultra Librarian 3D Model Ultra Librarian MT9VDDT6472HY-40BF2 CAD Model

Description

The MT9VDDT6472HY-40BF2 is a 512MB (64M x 72) DDR SDRAM module manufactured by Micron Technology Inc. It is designed for high-performance computing and memory-intensive applications. This registered DIMM (RDIMM) module provides high bandwidth and low latency, making it suitable for servers, workstations, and networking equipment.

Applications:

  • Servers
  • Workstations
  • Networking equipment
  • High-performance computing systems
  • Data centers

Features:

  • 512MB (64M x 72) DDR SDRAM
  • PC3200 (DDR-400)
  • Registered DIMM (RDIMM)
  • 2.5V power supply
  • CL3 latency
  • Gold edge connector
  • On-die termination (ODT)

Benefits:

  • High memory capacity supports large datasets and complex applications.
  • High bandwidth enables fast data transfer rates.
  • Low latency improves system responsiveness.
  • Registered DIMM enhances signal integrity and stability in high-density memory configurations.
  • On-die termination reduces signal reflections and improves signal quality.

Additional Details:

The MT9VDDT6472HY-40BF2 is a DDR (Double Data Rate) SDRAM module, meaning it transfers data on both the rising and falling edges of the clock signal, effectively doubling the data transfer rate. It is PC3200 rated, indicating a maximum data transfer rate of 3.2 GB/s. The RDIMM design includes a register between the memory controller and the DRAM chips, buffering the address and control signals to improve signal integrity and allow for higher memory capacities. The module operates at 2.5V and has a CAS latency (CL) of 3. On-die termination (ODT) is incorporated to reduce signal reflections on the memory bus, further enhancing signal quality and stability. The module is compatible with systems that support DDR-400 RDIMM memory modules.

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