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MT29F512G08EBHBFJ4-T:B

Part No MT29F512G08EBHBFJ4-T:B
Manufacturer Micron Technology Inc.
Catalog IT infrastructure Memory
Description 512Gb NAND Flash
Sample
Rohs State Need to verify
ECAD Module
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Category IT infrastructure Memory
Manufacturer Micron Technology Inc.
Win Source Part Number 1454217-MT29F512G08EBHBFJ4-T:B
Package Bulk
Product Status Obsolete
Memory Type Non-Volatile
Memory Format FLASH
Technology FLASH - NAND (TLC)
Memory Size 512Gbit
Memory Organization 64G x 8
Memory Interface Parallel
Voltage - Supply 2.5V ~ 3.6V
Operating Temperature 0°C ~ 70°C (TA)
Grade -
Mounting Type Surface Mount
Package / Case 132-VBGA
Supplier Device Package 132-VBGA (12x18)
Ultra Librarian 3D Model Ultra Librarian MT29F512G08EBHBFJ4-T:B CAD Model

Description

The MT29F512G08EBHBFJ4-T:B is a massive 512 gigabit (Gb) NAND flash memory chip from Micron Technology, one of the world's leading manufacturers of memory and storage solutions. This high-capacity chip is engineered to meet the growing demands for larger, more reliable storage in the technology sector. With 512Gb of storage, this NAND flash memory is ideal for use in data centers, enterprise storage solutions, high-end consumer electronics, and the emerging market of connected devices. The NAND flash technology used in the MT29F512G08EBHBFJ4-T:B offers several advantages, including high-density storage, low cost per bit, and the ability to endure a large number of write and erase cycles, making it a robust and versatile solution for various applications. Its high capacity and performance characteristics make it an essential component in the development of products that require extensive data storage and fast access times, such as solid-state drives (SSDs), smartphones, and other digital devices that handle large amounts of data.

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