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MT29F2G16ABDHC:D

Part No MT29F2G16ABDHC:D
Manufacturer Micron Technology Inc.
Catalog Memory
Sample
Rohs State rohs
ECAD Module
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Reference Date Code 0844+
Reference case FBGA
Manufacturer Micron Technology Inc.
Manufacturer Homepage www.micron.com
Popularity Low
Supply and Demand Status Limited
Win Source Part Number 755216-MT29F2G16ABDHC:D
Ultra Librarian 3D Model Ultra Librarian MT29F2G16ABDHC:D CAD Model

Description

The Micron MT29F2G16ABDHC:D is a 2Gb (Gigabit) NAND flash memory device. This is a non-volatile memory chip used for data storage in a wide range of applications. It utilizes NAND flash technology, which offers high storage density and relatively low cost per bit compared to other memory technologies. The ':D' likely refers to a specific speed grade, temperature range or other production-related specifier.

Applications

  • Solid-state drives (SSDs)
  • USB flash drives
  • Memory cards (SD, microSD)
  • Embedded systems
  • Mobile devices (smartphones, tablets)

Features

  • 2Gb (256MB) storage capacity
  • NAND flash technology
  • Page size: Typically 2KB or 4KB (check datasheet)
  • Block size: Typically 128KB or 256KB (check datasheet)
  • Operating voltage: Typically 3.3V or 1.8V (check datasheet)
  • ONFI (Open NAND Flash Interface) compliant
  • Error correction code (ECC)

Benefits

  • High storage density
  • Low cost per bit
  • Non-volatile data storage
  • Fast read and write speeds
  • Small form factor
  • Robust data retention

Additional Details

The MT29F2G16ABDHC:D stores data in NAND flash memory cells, which are arranged in pages and blocks. Data is typically written to and read from the flash memory in pages, while erase operations are performed on entire blocks. The device uses error correction code (ECC) to detect and correct errors that may occur during data storage and retrieval. The ONFI standard defines a common interface for NAND flash memory devices, simplifying system integration.

This NAND flash memory chip is commonly used in a wide range of applications where high-density, low-cost, and non-volatile data storage are required. Proper memory management techniques, such as wear leveling, are essential for maximizing the lifespan of the flash memory. The datasheet should be consulted for specific performance characteristics and operating conditions. Signal integrity and power supply stability are crucial for reliable operation.

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