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Same model may have multiple batches, images only for reference.
IRGI4060DPBF Real Image
Same model may have multiple batches, images only for reference.

IRGI4060DPBF

Part No IRGI4060DPBF
Manufacturer Infineon Technologies
Catalog IGBTs - Single
Description IGBT 600V 14A 37W TO220ABFP
Datasheet
IRGI4060DPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
IGBT Type Trench
VCEO Maximum Collector-Emitter Breakdown Voltage 600V
Maximum Current Collector 14A
Pulsed Collector Current 23A
Collector-emitter saturation voltage(Max) 1.72V @ 15V, 7.5A
Maximum Power Dissipation 37W
Total Switching Energy(Ets) 47μJ (on), 141μJ (off)
Input Type Standard
Gate Charge 19nC
Turn-on and Turn-off delay time 29ns/101ns
Testing Conditions 400V, 7.5A, 47 Ohm, 15V
Reverse Recovery Time (trr) 73ns
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220AB Full-Pak
Win Source Part Number 205445-IRGI4060DPBF
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRGI4060DPBF CAD Model

Description

The Infineon Technologies IRGI4060DPBF is a through-hole IGBT transistor with a maximum current collector of 14A and a VCEO maximum collector-emitter breakdown voltage of 600V.

  • Maximum Power Dissipation: 37W
  • Gate Charge: 19nC
  • Total Switching Energy (Ets) (on): 47μJ
  • Total Switching Energy (Ets) (off): 141μJ
  • Turn-on Delay Time: 29ns
  • Turn-off Delay Time: 101ns
  • Packaging: TO-220AB Full-Pak
  • Application: suitable for use in discrete semiconductor products such as power supplies and motor control circuits.

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