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Same model may have multiple batches, images only for reference.
IRG4BC20UDSTRRP Infineon Technologies
Same model may have multiple batches, images only for reference.

IRG4BC20UDSTRRP

Part No IRG4BC20UDSTRRP
Manufacturer Infineon Technologies
Catalog IGBTs - Single
Description IGBT 600V 13A 60W D2PAK
Datasheet
IRG4BC20UDSTRRP Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Not For New Designs
VCEO Maximum Collector-Emitter Breakdown Voltage 600V
Maximum Current Collector 13A
Pulsed Collector Current 52A
Collector-emitter saturation voltage(Max) 2.1V @ 15V, 6.5A
Maximum Power Dissipation 60W
Total Switching Energy(Ets) 160μJ (on), 130μJ (off)
Input Type Standard
Gate Charge 27nC
Turn-on and Turn-off delay time 39ns/93ns
Testing Conditions 480V, 6.5A, 50 Ohm, 15V
Reverse Recovery Time (trr) 37ns
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Win Source Part Number 129543-IRG4BC20UDSTRRP
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRG4BC20UDSTRRP CAD Model

Description

The Infineon Technologies IRG4BC20UDSTRRP is a high-performance IGBT (Insulated Gate Bipolar Transistor) designed by Infineon Technologies.

  • Mounting: SMD (SMT)
  • Maximum Collector-Emitter Breakdown Voltage: 600V
  • Maximum Collector Current: 13A
  • Maximum Power Dissipation: 60W
  • Reverse Recovery Time (trr): 37ns
  • Gate Charge: 27nC
  • Total Switching Energy (Ets) (on): 160μJ
  • Total Switching Energy (Ets) (off): 130μJ
  • Turn-On Delay Time: 39ns
  • Turn-Off Delay Time: 93ns
  • Category: Discrete Semiconductor Products
  • Temperature Range: -55°C to 150°C (TJ)
  • Recommendation: Not recommended for new designs
  • Package: D2PAK

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