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Same model may have multiple batches, images only for reference.
IRF7749L2TRPBF Real Image
Same model may have multiple batches, images only for reference.

IRF7749L2TRPBF

Part No IRF7749L2TRPBF
Manufacturer Infineon Technologies
Catalog FETs - Single
Description Benchmark MOSFETs Product Selection Guide | MOSFET N-CH 60V DIRECTFET L8
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 60V
Id - Continuous Drain Current 33A, 375A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 1.5mOhm at 120A, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 300nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 12320pF at 25V
Power Dissipation (Maximum) 3.3W, 125W
Temperature Range - Operating -55°C ~ 175°C
Mounting Style SMD
Supplier Device Package DIRECTFET L8
Manufacturer Package DirectFET Isometric L8
Manufacturer Pack Quantity 1
MSL Level 1 (Unlimited)
Win Source Part Number 758584-IRF7749L2TRPBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRF7749L2TRPBF CAD Model

Description

The Infineon Technologies IRF7749L2TRPBF is a high-performance N-Channel MOSFET designed for use in high power applications.

  • On-Resistance: 1.5 mOhm @ 120A
  • Drain-Source Breakdown Voltage: 60V
  • Package: DirectFET Isometric L8
  • Halogen-Free Compliant: Yes
  • Supply and Demand: Balanced
  • Power Dissipation: 3.3W and 125W

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108+ $3.2372 $349.6176
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