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Same model may have multiple batches, images only for reference.
IKP03N120H2 Real Image
Same model may have multiple batches, images only for reference.

IKP03N120H2

Part No IKP03N120H2
Manufacturer Infineon Technologies
Catalog IGBTs - Single
Description IGBT, 9.6A, 1200V, N-CHANNEL
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - IGBTs - Single IGBTs
Mfr Infineon Technologies
Package Bulk
Product Status Active
Voltage - Collector Emitter Breakdown (Max) 1200 V
Current - Collector (Ic) (Max) 9.6 A
Current - Collector Pulsed (Icm) 9.9 A
Vce(on) (Max) @ Vge, Ic 2.8V @ 15V, 3A
Power - Max 62.5 W
Switching Energy 290µJ
Input Type Standard
Gate Charge 22 nC
Td (on/off) @ 25°C 9.2ns/281ns
Test Condition 800V, 3A, 82Ohm, 15V
Reverse Recovery Time (trr) 42 ns
Temperature Range - Operating -40°C ~ 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-220-3
Supplier Device Package PG-TO220-3-1
Standard Package 1 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 602678-IKP03N120H2
Ultra Librarian 3D Model Ultra Librarian IKP03N120H2 CAD Model

Description

The 602678-IKP03N120H2 is a single IGBT transistor designed for high power applications manufactured by Infineon Technologies.

  • Power Dissipation: 62.5W (Maximum)
  • Reverse Recovery Time: 42ns
  • Collector-Emitter Breakdown Voltage: 1200V
  • Collector Current: 9.6A (Maximum)
  • On-Voltage: 2.8V @ 15V Gate-Emitter Voltage and 3A Collector Current
  • Gate Charge: 22nC
  • Switching Energy: 290µJ
  • Mounting Type: Through Hole
  • Package: TO-220-3
  • Operating Temperature: -40°C to 150°C
  • Product Status: Active

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35+ $9.9827 $349.3945
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