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Same model may have multiple batches, images only for reference.
IHW50N65R6XKSA1 Infineon Technologies
Same model may have multiple batches, images only for reference.

IHW50N65R6XKSA1

Part No IHW50N65R6XKSA1
Manufacturer Infineon Technologies
Catalog IGBTs - Single
Description HOME APPLIANCES 14 PG-TO247-3
Datasheet
IHW50N65R6XKSA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - IGBTs - Single IGBTs
Mfr Infineon Technologies
Series -
Package Tube
Product Status Active
IGBT Type -
Voltage - Collector Emitter Breakdown (Max) 650 V
Current - Collector (Ic) (Max) 100 A
Current - Collector Pulsed (Icm) 150 A
Vce(on) (Max) @ Vge, Ic 1.6V @ 15V, 50A
Power - Max 251 W
Switching Energy 1.5mJ (on), 660µJ (off)
Input Type Standard
Gate Charge 199 nC
Td (on/off) @ 25°C 21ns/261ns
Test Condition 400V, 50A, 10Ohm, 15V
Reverse Recovery Time (trr) 108 ns
Temperature Range - Operating -40°C ~ 175°C (TJ)
Mounting Type Through Hole
Package / Case TO-247-3
Supplier Device Package PG-TO247-3
Base Product Number IHW50
MSL Level Not Applicable
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1376595-IHW50N65R6XKSA1
Ultra Librarian 3D Model Ultra Librarian IHW50N65R6XKSA1 CAD Model

Description

The IHW50N65R6XKSA1 is a single IGBT transistor used in various power applications from Infineon Technologies.

  • Operating Temperature: -40°C to 175°C
  • Voltage Breakdown: 650V
  • Maximum Continuous Current: 100A
  • On-State Resistance: 1.6V @ 15V and 50A
  • Reverse Recovery Time: 108ns
  • Gate Charge: 199nC @ 10V
  • Package: TO-247-3
  • Mounting Type: Through-Hole

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