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IDH08S120

Part No IDH08S120
Manufacturer Infineon Technologies
Catalog Diodes, Rectifiers - Single
Description DIODE SIL CARB 1.2KV 7.5A TO220
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Diodes - Rectifiers - Single Diodes
Mfr Infineon Technologies
Package Bulk
Product Status Active
Technology SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) 1200 V
Current - Average Rectified (Io) 7.5A
Voltage - Forward (Vf) (Max) @ If 1.8 V @ 7.5 A
Speed No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) 0 ns
Current - Reverse Leakage @ Vr 180 µA @ 1200 V
Capacitance @ Vr, F 380pF @ 1V, 1MHz
Mounting Type Through Hole
Package / Case TO-220-2
Supplier Device Package PG-TO220-2
Operating Temperature - Junction -55°C ~ 175°C
Standard Package 1 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.10.0080
Win Source Part Number 601176-IDH08S120
Ultra Librarian 3D Model Ultra Librarian IDH08S120 CAD Model

Description

The IDH08S120 is a single silicon carbide (SiC) Schottky diode designed for rectification applications.

  • Maximum Reverse Voltage: 1200V
  • Average Rectified Current: 7.5A
  • Forward Voltage Drop: 1.8V @ 7.5A
  • Mounting Type: Through-Hole
  • Recovery Time: 0ns
  • Operating Temperature Range: -55°C to 175°C
  • Product Status: Active

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Pricing & Ordering

Quantity Unit Price Ext. Price
14+ $3.6530 $51.1420
34+ $2.9974 $101.9116
52+ $2.9037 $150.9924
72+ $2.8100 $202.3200
93+ $2.7164 $252.6252
124+ $2.4354 $301.9896
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,900 pieces
MOQ: 14 pcs
Order Increment : 1 pcs
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