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AIMW120R060M1HXKSA1

Part No AIMW120R060M1HXKSA1
Manufacturer Infineon Technologies
Catalog FETs - Single
Description 1200V COOLSIC MOSFET PG-TO247-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Win Source Part Number WS1203085-AIMW120R060M1HXKSA1
Manufacturer Infineon Technologies
Category Discrete Semiconductor Products -Transistors FETs, MOSFETs- Single FETs, MOSFETs
Series Automotive, AEC-Q101, CoolSiC™
Package Tube
Product Status Active
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 1200 V
Power Dissipation (Max) 150W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Ultra Librarian 3D Model Ultra Librarian AIMW120R060M1HXKSA1 CAD Model

Description

The Infineon Technologies 1203085 is a N-Channel SiCFET (Silicon Carbide) transistor designed for automotive applications. 1203085 is manufactured by Infineon Technologies.

  • Channel Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Application: Automotive
  • Drain to Source Voltage (Vdss): 1200 V
  • Power Dissipation: 150W (Tc)
  • Operating Temperature: -55°C to 175°C (TJ)
  • Series: CoolSiC™
  • Package: Tube
  • Product Status: Active

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Pricing & Ordering

Quantity Unit Price Ext. Price
3+ $22.3525 $67.0575
5+ $20.9105 $104.5525
8+ $20.1894 $161.5152
11+ $18.7473 $206.2203
14+ $18.0263 $252.3682
18+ $17.3052 $311.4936
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 9,800 pieces
MOQ: 3 pcs
Order Increment : 1 pcs
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