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HMT351R7EFR8A-H9T3

Part No HMT351R7EFR8A-H9T3
Manufacturer Hynix Semiconductor
Catalog Memory - Modules
Description DDR3-1333 512Mx72 ECC Reg/RDIMM 2Rx8 (4GB) 1.35V
Sample
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ECAD Module
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Categories Memory - Modules
Win Source Part Number 949451-HMT351R7EFR8A-H9T3
Series *
Ultra Librarian 3D Model Ultra Librarian HMT351R7EFR8A-H9T3 CAD Model

Description

The HMT351R7EFR8A-H9T3 is a 4GB DDR3 1600MHz ECC Registered DIMM (RDIMM) manufactured by Hynix Semiconductor. It is designed for use in servers and workstations that require high-performance and reliable memory.

Applications:

  • Servers
  • Workstations
  • High-performance computing
  • Data centers

Features:

  • 4GB capacity
  • DDR3 technology
  • 1600MHz clock speed
  • ECC Registered DIMM (RDIMM)
  • 240-Pin DIMM form factor
  • 1.5V operating voltage

Benefits:

  • Improved data integrity with ECC error correction
  • Enhanced system stability due to the registered design
  • Increased memory capacity for running demanding applications
  • Faster data transfer rates for improved performance
  • Reliable performance in mission-critical environments

Additional Details:

This memory module is designed with ECC (Error-Correcting Code) functionality, which detects and corrects single-bit errors, ensuring data integrity and preventing system crashes. The registered design (RDIMM) adds a register between the DRAM modules and the system's memory controller, which buffers address and control signals to enhance stability, especially when multiple DIMMs are installed. The module operates at 1.5V and utilizes a 240-pin DIMM form factor, making it compatible with a wide range of server and workstation motherboards supporting DDR3 RDIMM. With a capacity of 4GB, this module provides ample memory for running various applications, including virtualization, database management, and scientific simulations. Hynix Semiconductor is a reputable manufacturer known for producing high-quality memory products. The HMT351R7EFR8A-H9T3 is a suitable choice for systems that demand reliability, stability, and high-performance memory capabilities.

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