SDT20A120CT Dual Trench MOS Barrier Schottky Rectifier
The SDT20A120CT from Diodes Incorporated is a high-performance, dual trench MOS barrier Schottky rectifier designed for applications that demand energy efficiency, high reliability, and space-saving components. This rectifier is a perfect choice for switch-mode power supplies, high-frequency converters, and power management systems, among others.
Key Features
- High Current Capability: The SDT20A120CT can handle a high forward surge current of 150A, making it suitable for applications that experience high inrush currents.
- Low Forward Voltage Drop: With a low forward voltage drop of 0.82V at 10A, this rectifier ensures minimal power loss and improved efficiency, which is essential for energy-sensitive designs.
- Power Dissipation: It has a power dissipation of 3.75W, which contributes to its ability to handle high power applications while maintaining a low thermal footprint.
- High Junction Temperature: The device operates at a junction temperature range of -55°C to +150°C, providing a wide thermal operating range suitable for various environmental conditions.
Applications
- Switch-mode power supplies (SMPS)
- DC-DC converters
- Free-wheeling diodes
- Power management devices
- Reverse battery protection
Product Specifications
| Parameter |
Value |
| Package |
TO-220AB |
| Configuration |
Dual Common Cathode |
| Maximum Average Rectified Current (Io) |
20A |
| Peak Repetitive Reverse Voltage (Vrrm) |
120V |
| Forward Voltage Drop (Vf) |
0.82V @ 10A |
| Forward Surge Current (Ifsm) |
150A |
| Operating Junction Temperature (Tj) |
-55°C to +150°C |
The SDT20A120CT is a robust and efficient solution for your power rectification needs, offering a combination of low power loss, high current handling, and thermal resilience. Diodes Incorporated's commitment to quality ensures that this component will enhance the performance and reliability of your electronic designs.