The DMP26M7UFG-13 is a high-performance P-Channel enhancement mode MOSFET from Diodes Incorporated, designed for power management applications. This MOSFET is a testament to Diodes Incorporated's commitment to providing energy-efficient and compact solutions for a wide range of electronic devices.

Key Features

• Low Threshold Voltage: The device features a low threshold voltage, making it suitable for low voltage applications and ensuring efficient operation at lower gate drive voltages.
• High Power Dissipation: With an excellent power dissipation capability, this MOSFET can handle significant power levels, making it ideal for high-performance applications.
• Advanced Packaging: The DMP26M7UFG-13 comes in a compact U-DFN2020-6 (Type B) package, which allows for a smaller footprint on PCBs and is ideal for space-constrained applications.
• Low On-Resistance: The device boasts a low on-resistance, reducing conduction losses and improving overall efficiency.

Applications

This MOSFET is versatile and can be used in a variety of applications, including:

• Power management circuits
• Load switches
• Battery management systems
• DC-DC converters
• Portable devices

Specifications

Parameter Value Drain-Source Voltage (V<sub>DS) -20V Gate-Source Voltage (V<sub>GS) ±8V Continuous Drain Current (I<sub>D) -3.7A Power Dissipation (P<sub>D) 1.25W R<sub>DS(on) 50 mΩ at V<sub>GS = -4.5V

Quality and Reliability

Diodes Incorporated ensures that the DMP26M7UFG-13 meets stringent quality and reliability standards, making it a reliable choice for designers and manufacturers. The product is RoHS compliant and is designed to meet or exceed industry standards for performance and durability.