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DMN24H11DS-7

Part No DMN24H11DS-7
Manufacturer Diodes Incorporated
Catalog FETs - Single
Description MOSFET BVDSS: 101V-250V SOT23 T& / Low Gate Threshold Voltage
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Manufacturer Diodes Incorporated
Packaging Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 240V
Current - Continuous Drain (Id) at 25°C 270mA
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Maximum) at Id, Vgs 11Ohm at 300mA, 10V
Vgs(th) (Maximum) at Id 3V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 3.7nC at 10V
Maximum Vgs ±20V
Input Capacitance (Ciss) (Maximum) at Vds 76.8pF at 25V
Power Dissipation (Maximum) 750mW
Temperature Range - Operating -55°C ~ 150°C
Mounting Style SMD
Supplier Device Package SOT-23
Manufacturer Package TO-236-3, SC-59, SOT-23-3
Manufacturer Pack Quantity 3,000
MSL Level 1 (Unlimited)
Popularity High
Supply and Demand Status Balance
Win Source Part Number 802161-DMN24H11DS-7
Ultra Librarian 3D Model Ultra Librarian DMN24H11DS-7 CAD Model

Description

DMN24H11DS-7 Dual N-Channel Enhancement Mode Field Effect Transistor

The DMN24H11DS-7 from Diodes Incorporated is a state-of-the-art, dual N-Channel enhancement mode field effect transistor (FET) designed for high-efficiency power management applications. This compact, surface-mount transistor is engineered for minimal on-state resistance (R<sub>DS(on)) while providing a high continuous drain current, making it an ideal choice for a wide range of electronic circuits.

Key Features:

  • Low On-Resistance: The device boasts an extremely low R<sub>DS(on), which translates to reduced conduction losses and improved overall efficiency in applications.
  • High Continuous Drain Current: With the ability to support a high continuous drain current, the DMN24H11DS-7 is suitable for demanding applications that require robust current handling capabilities.
  • Dual N-Channel Configuration: The dual N-Channel setup allows for flexibility in design, enabling the use of a single component for two separate channels, saving space and reducing component count.
  • Lead-Free and RoHS Compliant: In keeping with modern environmental standards, the DMN24H11DS-7 is lead-free and compliant with the Restriction of Hazardous Substances (RoHS) directive, making it suitable for use in a wide range of markets and applications.
  • Surface-Mount Package: The transistor comes in a small SOT-26 package, ideal for space-constrained applications while allowing for efficient thermal management and easy integration into various circuit designs.

Applications:

The DMN24H11DS-7 is versatile and can be used in a variety of applications, including:

  • Power Management Circuits
  • DC-DC Converters
  • Battery Management Systems
  • Load Switches
  • Motor Control Circuits

Product Summary:

The DMN24H11DS-7 from Diodes Incorporated exemplifies modern FET technology with its low on-resistance, high current capability, and dual-channel design. Its compliance with environmental standards and compact form factor makes it a highly desirable component for designers looking to create efficient, reliable, and space-saving power management solutions.

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Pricing & Ordering

Quantity Unit Price Ext. Price
325+ $0.1549 $50.3425
790+ $0.1271 $100.4090
1,220+ $0.1232 $150.3040
1,680+ $0.1192 $200.2560
2,175+ $0.1152 $250.5600
2,905+ $0.1033 $300.0865
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 30,000 pieces
MOQ: 325 pcs
Order Increment : 1 pcs
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