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DMN10H220LVT-7

Part No DMN10H220LVT-7
Manufacturer Diodes Incorporated
Catalog FETs - Single
Description 100V N-CHANNEL ENHANCEMENT MODE MOSFET | MOSFET N-CH 100V 1.87A TSOT26
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Tape and Reel
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 100V
Id - Continuous Drain Current 1.87A
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Maximum) at Id, Vgs 220mOhm at 1.6A, 10V
Gate Source Voltage(th) (Maximum) at Id 2.5V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 8.3nC at 10V
Gate Source Voltage (Maximum) ±16V
Input Capacitance (Ciss) (Maximum) at Vds 401pF at 25V
Power Dissipation (Maximum) 1.67W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style SMD
Supplier Device Package TSOT-26
Manufacturer Package SOT-23-6 Thin, TSOT-23-6
Manufacturer Pack Quantity 3,000
MSL Level 1 (Unlimited)
Win Source Part Number 723222-DMN10H220LVT-7
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian DMN10H220LVT-7 CAD Model

Description

Product Overview: DMN10H220LVT-7 from Diodes Incorporated

The DMN10H220LVT-7 is a high-performance, dual N-channel enhancement mode field effect transistor (FET) designed by Diodes Incorporated, a leading global manufacturer and supplier of high-quality application-specific standard products within the broad discrete, logic, and analog semiconductor markets. This MOSFET is part of Diodes Incorporated's extensive range of power management devices, tailored to provide efficient solutions for today's electronic circuits.

Key Features

  • Low On-Resistance: The DMN10H220LVT-7 boasts a low on-resistance, which significantly reduces conduction losses and improves overall efficiency in applications.
  • High-Speed Switching: This MOSFET is designed for fast switching, making it suitable for high-speed applications, including power supplies and DC-DC converters.
  • Dual N-Channel Configuration: The dual N-channel setup allows for a compact design, providing two transistors in one package for space-saving and simplification in circuit design.
  • Low Threshold Voltage: It features a low threshold voltage that ensures low gate drive requirements, facilitating easier control and interfacing with logic levels.

Applications

The DMN10H220LVT-7 is versatile and can be used in a wide array of applications. Its high efficiency and fast switching characteristics make it ideal for:

  • Power Management Functions
  • DC-DC Converters
  • Battery Management Systems
  • Load Switches
  • Motor Drives

Product Specifications

The DMN10H220LVT-7 is provided in a compact SOT-523 package, which is suitable for surface-mount technology (SMT). The device features a continuous drain current of 1.3A and a pulsed drain current of 5.2A, ensuring it can handle significant power for its size. It operates over a wide temperature range, which makes it reliable under various environmental conditions.

Quality and Reliability

Diodes Incorporated is committed to delivering high-quality products. The DMN10H220LVT-7 is built to meet stringent quality standards, ensuring reliability and performance consistency for the end user. Whether for industrial, commercial, or consumer electronics, this MOSFET is a solid choice for designers looking to optimize their power management and switching applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
155+ $0.3255 $50.4525
375+ $0.2671 $100.1625
580+ $0.2588 $150.1040
800+ $0.2504 $200.3200
1,035+ $0.2421 $250.5735
1,385+ $0.2170 $300.5450
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 21,000 pieces
MOQ: 155 pcs
Order Increment : 1 pcs
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