The CZT2680 is a silicon NPN epitaxial planar transistor from Central Semiconductor Corp, designed for high-voltage and high-speed switching applications. Its robust construction ensures reliability in demanding environments. It is housed in a small surface mount package making it suitable for compact designs.

Applications

• High-voltage switching circuits
• High-speed switching circuits
• Driver stages
• Amplifier applications
• Power supplies

Features

• High breakdown voltage
• Low saturation voltage
• High switching speed
• Surface mount package
• RoHS compliant

Benefits

• Enables efficient high-voltage switching
• Minimizes power loss due to low saturation voltage
• Facilitates fast switching performance
• Saves space in compact designs
• Environmentally friendly

Additional Details

The CZT2680 boasts a collector-emitter breakdown voltage (VCEO) of up to 300V, enabling its use in high-voltage applications. Its continuous collector current (IC) is typically around 0.5A. This transistor's transition frequency is typically above 50 MHz, supporting high-speed switching. It is typically supplied in a SOT-223 package. It is commonly used in applications where a small footprint and high performance are critical. Due to its high voltage and moderate current capabilities, it is suitable for both amplification and switching circuits. As an NPN transistor, it requires a positive base current to turn on. Always consult the manufacturer's datasheet for the most up-to-date and accurate specifications before designing with this part.