The ADL8107 is a gallium arsenide (GaAs), monolithic microwave IC (MMIC), pseudomorphic high electron mobility transistor (pHEMT), low noise, wideband, high linearity amplifier that operates from 6 GHz to 18 GHz.
The ADL8107 provides a typical gain of 24 dB at 7 GHz to 16 GHz, a 1.3 dB typical noise figure at 7 GHz to 16 GHz, a 18.5 dBm typical output power for 1 dB compression (OP1dB) at 7 GHz to 16 GHz, and a typical output third-order intercept (OIP3) of 29 dBm at 7 GHz to 16 GHz, requiring only 90 mA from a 5 V drain supply voltage. This low noise amplifier has a high output second-order intercept (OIP2) of 30.5 dBm typical at 7 GHz to 16 GHz, making the ADL8107 suitable for military and test instrumentation applications.