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TPC8125,LQ(S

Part No TPC8125,LQ(S
Manufacturer Toshiba Semiconductor and Storage
Catalog FETs - Single
Description MOSFET P-CH 30V 10A 8SOP
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Tape and Reel
Transistor Polarity P-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 30V
Id - Continuous Drain Current 10A
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Maximum) at Id, Vgs 13mOhm at 5A, 10V
Gate Source Voltage(th) (Maximum) at Id 2V at 500μA
Gate Charge (Qg) (Maximum) at Vgs 64nC at 10V
Gate Source Voltage (Maximum) +20V, -25V
Input Capacitance (Ciss) (Maximum) at Vds 2580pF at 10V
Power Dissipation (Maximum) 1W
Temperature Range - Operating 150°C
Mounting Style SMD
Supplier Device Package 8-SOP
Manufacturer Package 8-SOIC
Manufacturer Pack Quantity 2,500
MSL Level 1 (Unlimited)
Win Source Part Number 735388-TPC8125,LQ(S
Popularity Low
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian TPC8125,LQ(S CAD Model

Description

The Toshiba Semiconductor and Storage MOSFET is a P-channel FET transistor designed for use in discrete semiconductor products.

  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 10A
  • Rds on (Max): 13mOhm @ 5A and 10V
  • Power Dissipation: up to 1W
  • Package: 8-SOIC
  • Mounting: SMD technology
  • Gate-Source Voltage Threshold: 2V @ 500μA
  • Maximum Gate-Source Voltage: +20V, -25V
  • Input Capacitance: 2580pF @ 10V
  • Gate Charge: 64nC @ 10V
  • Operating Temperature: up to 150°C

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Pricing & Ordering

Quantity Unit Price Ext. Price
35+ $1.6817 $58.8595
85+ $1.3802 $117.3170
130+ $1.3363 $173.7190
180+ $1.2936 $232.8480
235+ $1.2509 $293.9615
310+ $1.1215 $347.6650
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,500 pieces
MOQ: 35 pcs
Order Increment : 1 pcs
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Shipping Information

Shipped from HK warehouse
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