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Same model may have multiple batches, images only for reference.
NTE2323 Real Image
Same model may have multiple batches, images only for reference.

NTE2323

Part No NTE2323
Manufacturer NTE
Catalog Transistors (BJT) - Single
Description TRANS NPN 200V 0.5A 14DIP / Bipolar (BJT) Transistor NPN 200 V 500 mA 80MHz 750 mW Through Hole 14-DIP
Datasheet
NTE2323 Datasheet
Sample
Rohs State Need to verify
ECAD Module
Need Help

Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single
Mfr NTE Electronics, Inc
Package Bag
Transistor Type NPN
Current - Collector (Ic) (Max) 500 mA
Voltage - Collector Emitter Breakdown (Max) 200 V
Vce Saturation (Max) @ Ib, Ic 500mV @ 2mA, 20mA
Current - Collector Cutoff (Max) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 30mA, 10V
Power - Max 750 mW
Frequency - Transition 80MHz
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Package / Case 14-DIP (0.300", 7.62mm)
Supplier Device Package 14-DIP
RoHS Status RoHS non-compliant
ECCN EAR99
HTSUS 8541.29.0095
Other Names 2368-NTE2323
Standard Package 1
Win Source Part Number 1081625-NTE2323
Ultra Librarian 3D Model Ultra Librarian NTE2323 CAD Model

Description

The NTE2323 is a bipolar transistor manufactured by NTE Electronics, Inc.

  • Quality: This component is a high-quality transistor
  • Maximum Power: with a maximum power of 750mW
  • Maximum Voltage: a maximum voltage of 200V
  • Maximum Current: and a maximum current of 500mA.
  • Ideal For: It is ideal for use in various electronic devices, including industrial, defense, military, and aerospace applications.

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