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IRG7PH44K10DPBF

Part No IRG7PH44K10DPBF
Manufacturer Infineon Technologies
Catalog IGBTs - Single
Description Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode | IGBT 1200V 70A 320W TO247AC
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube
Status Obsolete
Voltage - Collector Emitter Breakdown (Maximum) 1200V
Current - Collector (Ic) (Maximum) 70A
Current - Collector Pulsed (Icm) 100A
Vce(on) (Maximum) at Vge, Ic 2.4V at 15V, 25A
Maximum Power 320W
Switching Energy 2.1mJ (on), 1.3mJ (off)
Input Type Standard
Gate Charge 200nC
Td (on/off) at 25°C 75ns/315ns
Test Condition 600V, 25A, 10Ohm, 15V
Reverse Recovery Time (trr) 130ns
Temperature Range - Operating -40°C ~ 150°C
Mounting Style Through Hole
Manufacturer Package TO-247-3
Supplier Device Package TO-247AC
Manufacturer Pack Quantity 25
MSL Level 1 (Unlimited)
Win Source Part Number 1188330-IRG7PH44K10DPBF
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRG7PH44K10DPBF CAD Model

Description

The Infineon Technologies IRG7PH44K10DPBF is a through-hole IGBT transistor with a collector current of 70A and a collector-emitter voltage of 1200V.

  • Reverse Recovery Time: 130ns
  • Switching Energy: 2.1mJ (on) and 1.3mJ (off)
  • Gate Charge: 200nC
  • Maximum Power: 320W
  • Package: TO-247AC
  • Status: obsolete
  • Operating Temperature: -40°C to 150°C
  • Ideal for: high voltage, high current applications such as motor control and power inverters.

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Pricing & Ordering

Quantity Unit Price Ext. Price
8+ $6.2534 $50.0272
20+ $5.1310 $102.6200
31+ $4.9707 $154.0917
42+ $4.8103 $202.0326
54+ $4.6500 $251.1000
72+ $4.1690 $300.1680
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Availability: 5,000 pieces
MOQ: 8 pcs
Order Increment : 1 pcs
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