Product Overview: 1N5817-T by Diodes Incorporated

The 1N5817-T is a high-performance Schottky barrier rectifier diode designed and manufactured by Diodes Incorporated, a leading company in the semiconductor market. This diode is engineered to provide efficient, low-voltage rectification with minimal power loss, making it an ideal choice for a wide range of electronic applications.

Key Features

• Low Forward Voltage Drop: The 1N5817-T boasts a low forward voltage drop, typically around 0.45V at 1A, which translates to reduced power dissipation and improved system efficiency.
• High Surge Current Capability: Designed to handle high surge currents without failure, this diode ensures reliability and longevity in circuits that experience transient overloads.
• Guard Ring Die Construction: The guard ring design provides enhanced ruggedness and long-term reliability, especially important in harsh environments.
• Fast Switching: Its fast switching capability makes it suitable for high-frequency applications, contributing to reduced switching losses.

Applications

The versatility of the 1N5817-T allows it to be used in various applications, including:

• Low voltage, high-frequency inverters
• Free-wheeling diodes
• DC/DC converters
• Polyswitch protection devices
• Power supply circuits

Product Specifications

Parameter Value Package Type DO-41 Maximum Repetitive Reverse Voltage (V<sub>RRM) 20V Average Rectified Forward Current (I<sub>o) 1A Operating Temperature Range -65°C to 125°C

With its robust construction and excellent performance characteristics, the 1N5817-T from Diodes Incorporated stands out as a superior choice for designers and engineers seeking a reliable Schottky diode for their electronic projects.