The SI7483DP-T1 is an N-Channel MOSFET from Vishay Siliconix, designed for power management and switching applications. It is essentially the same as the SI7483DP but with a specific tape and reel packaging (T1) for automated assembly. This MOSFET offers a balanced performance with low on-resistance, gate charge, and a reasonable breakdown voltage.

Applications:

• DC-DC converters
• Load switching
• Power management in portable devices
• Synchronous rectification
• Motor control

Features:

• Low on-resistance (Rds(on)) for minimal conduction losses
• Low gate charge (Qg) for efficient switching
• High avalanche energy (EAS) rating for robustness
• TrenchFET® Power MOSFET technology
• 100% Rg tested
• Tape and reel packaging (T1) for automated assembly
• Compliant to RoHS directive 2011/65/EU and in accordance to WEEE 2002/96/EC

Benefits:

• Increased efficiency in power conversion circuits
• Reduced power dissipation, enabling lower operating temperatures
• Enhanced reliability because of robust design and avalanche capability
• Simplified thermal management
• Optimized for automated assembly processes
• Higher power density

Additional Details:

The SI7483DP-T1 comes in a PowerPAK® SO-8 single package. It features a drain-source voltage (Vds) of 30V and a continuous drain current (Id) of up to 13A, depending on thermal conditions. The typical on-resistance (Rds(on)) is about 6 mΩ at Vgs = 10V. The gate threshold voltage (Vgs(th)) is between 1V and 3V. The T1 suffix indicates that the device is supplied on tape and reel, making it suitable for high-volume automated assembly processes. The low gate charge provides faster switching speeds and reduces switching losses. The PowerPAK® SO-8 package offers excellent thermal performance. It is designed for high-frequency switching applications.