The SI7483DP-T1-E3 is an N-Channel MOSFET from Vishay Siliconix, tailored for power management and switching applications. It is similar to the SI7483DP and SI7483DP-T1, with the addition of being halogen-free (E3) and supplied in tape and reel packaging (T1) for automated assembly. This MOSFET is designed for efficient power conversion and control, offering low on-resistance and gate charge.

Applications:

• DC-DC converters
• Load switching
• Power management in portable devices
• Synchronous rectification
• Motor control

Features:

• Low on-resistance (Rds(on)) minimizes conduction losses
• Low gate charge (Qg) for efficient switching
• High avalanche energy (EAS) rating enhances robustness
• TrenchFET® Power MOSFET technology
• 100% Rg tested
• Tape and reel packaging (T1) for automated assembly
• Halogen-free (E3)
• Compliant to RoHS directive 2011/65/EU and in accordance to WEEE 2002/96/EC

Benefits:

• Improved efficiency in power conversion circuits
• Reduced power dissipation, resulting in lower operating temperatures
• Enhanced reliability because of robust design and avalanche capability
• Simplified thermal management
• Optimized for automated assembly processes
• Environmentally friendly (halogen-free)
• Higher power density applications

Additional Details:

The SI7483DP-T1-E3 is available in a PowerPAK® SO-8 single package. Its key specifications include a drain-source voltage (Vds) of 30V, a continuous drain current (Id) of up to 13A (depending on application and thermal conditions), and a typical on-resistance (Rds(on)) of about 6 mΩ at Vgs = 10V. The gate threshold voltage (Vgs(th)) typically falls between 1V and 3V. The T1 suffix indicates tape and reel packaging, making it suitable for automated assembly lines. The E3 suffix signifies that the device is halogen-free, aligning with environmental regulations. The PowerPAK® SO-8 package ensures excellent thermal performance and efficient heat dissipation. It's suited to high-frequency switching applications.