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TPS51601ADRBR

Part No TPS51601ADRBR
Manufacturer Texas Instruments
Catalog PMIC - Gate Drivers
Description IC MOSFET DRVR SYNC DUAL 8SON
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Integrated Circuits
Manufacturer Texas Instruments
Packaging Reel - TR
Status Active
Driven Configuration Half-Bridge
Channel Type Synchronous
Number of Drivers 2
Gate Type N-Channel MOSFET
Supply Voltage - Operating 4.5 V to 5.5 V
Logic Voltage - VIL, VIH 0.7V, 4V
Input Type Non-Inverting
Rise and Fall Time 15ns, 10ns
Temperature Range - Operating -40°C to 105°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SON (3x3)
Win Source Part Number 055612-TPS51601ADRBR
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian TPS51601ADRBR CAD Model

Description

Product Overview of TPS51601ADRBR from Texas Instruments

The TPS51601ADRBR is a state-of-the-art driver and MOSFET controller designed by Texas Instruments to optimize power solutions for DDR memory systems. This advanced component is specifically engineered to work with DDR2, DDR3, DDR3L, and DDR4 memory systems, providing active termination for the memory bus signals. The TPS51601ADRBR ensures stable operation by delivering the necessary termination voltage (VTT) and a reference voltage (VTTREF) that is half of the supply voltage (VDDQ).

Encased in a compact 8-SON PowerPAD™ package, the TPS51601ADRBR is designed for space-constrained applications. Its small footprint makes it an excellent choice for laptops, desktops, servers, and any other system where efficient memory power management is crucial. The device integrates a high-performance linear regulator and a buffered low-noise reference to drive the precision requirements of the VTT and VTTREF voltages.

One of the key features of the TPS51601ADRBR is its sink/source capability, which is essential for DDR termination. It can provide up to 2 A of sink or source current, which is vital for maintaining signal integrity during periods of high-speed data transmission. Additionally, the device offers an active-low power-down feature, which helps in reducing power consumption when the memory is not in active use.

The TPS51601ADRBR also includes built-in protection features such as under-voltage lockout (UVLO), over-current protection (OCP), and thermal shutdown (TSD), ensuring reliable operation under various conditions. These safeguards help to prevent damage to the memory system and extend the lifespan of the product.

For design flexibility, the TPS51601ADRBR supports a wide input voltage range from 1.1 V to 3.6 V, making it compatible with a variety of DDR memory generations. Its high accuracy and low output voltage temperature coefficient ensure stable VTT and VTTREF voltages over a wide temperature range, which is critical for system performance and reliability.

Overall, the TPS51601ADRBR from Texas Instruments is an indispensable component for designers looking to optimize their DDR memory power management, offering a blend of performance, compact design, and robust protection features.

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Pricing & Ordering

Quantity Unit Price Ext. Price
19+ $2.7633 $52.5027
45+ $2.2674 $102.0330
69+ $2.1965 $151.5585
95+ $2.1257 $201.9415
122+ $2.0548 $250.6856
163+ $1.8422 $300.2786
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Availability: 11,997 pieces
MOQ: 19 pcs
Order Increment : 1 pcs
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