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STD80N02-011

Part No STD80N02-011
Manufacturer ON Semiconductor
Catalog OEM Parts ( S )
Sample
Rohs State Need to verify
ECAD Module
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RoHS Non-Compliant
Win Source Part Number 989876-STD80N02-011
Categories OEM Parts( S )
Manufacturer ON Semiconductor
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian STD80N02-011 CAD Model

Description

ON Semiconductor STD80N02-011 Overview

The STD80N02-011 from ON Semiconductor is a robust N-channel MOSFET designed for high-performance power switching applications. This power MOSFET is a part of ON Semiconductor's portfolio of energy-efficient devices, engineered to meet the demands of modern electronic circuits requiring high-speed switching, low on-resistance, and minimal power loss.

Key Features

  • Low On-Resistance: The device features a very low on-resistance (RDS(on)), which enhances its efficiency by minimizing conduction losses when the MOSFET is in the 'on' state.
  • High Switching Speed: It offers high-speed switching capabilities, making it suitable for applications where fast switching is crucial, such as power supplies and DC-DC converters.
  • High Current Capability: With the ability to handle significant current levels, the STD80N02-011 is well-suited for high-power applications.
  • Thermal Performance: The device is encapsulated in a package that provides excellent thermal performance, ensuring reliability even under high-temperature operating conditions.

Applications

The STD80N02-011 is versatile and can be used in various applications, including:

  • Switch Mode Power Supplies (SMPS)
  • DC-DC Converters
  • Motor Control Circuits
  • Power Management Systems
  • Automotive Applications
  • Other High-Efficiency Power Switching Designs

Product Specifications

The MOSFET's specifications are engineered to provide reliable and efficient performance:

  • Drain-Source Voltage (VDSS): The maximum voltage it can withstand from drain to source is specified, ensuring it can operate safely within a given voltage range.
  • Continuous Drain Current (ID): Indicates the maximum current the device can conduct continuously without degradation.
  • Pulsed Drain Current (IDM): Reflects the maximum current it can handle in a pulsed mode, which is critical for applications with transient loads.
  • Gate Threshold Voltage (VGS(th)): The voltage level at which the MOSFET begins to turn on, important for understanding how the device will behave in a circuit.

The STD80N02-011 MOSFET from ON Semiconductor is a testament to the company's commitment to providing high-quality components that enhance the performance and efficiency of electronic systems across a wide range of applications.

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