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NVMFD5C446NWFT1G

Part No NVMFD5C446NWFT1G
Manufacturer ON Semiconductor
Catalog OEM Souring
Description Dual N-Channel Power MOSFET 40V, 127A, 2.9mΩ
Sample
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Category OEM Souring
Win Source Part Number 1463616-NVMFD5C446NWFT1G
Manufacturer ON Semiconductor
Package Tape & Reel (TR);Cut Tape (CT)
Product Status Active
Technology MOSFET (Metal Oxide)
Configuration 2 N-Channel (Dual)
Drain to Source Voltage (Vdss) 40V
Current - Continuous Drain (Id) @ 25°C 24A (Ta), 127A (Tc)
Rds On (Max) @ Id, Vgs 2.9mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds 2450 pF @ 25 V
Power - Max 3.2W (Ta), 89W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Grade Automotive
Qualification AEC-Q101
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Supplier Device Package 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Ultra Librarian 3D Model Ultra Librarian NVMFD5C446NWFT1G CAD Model

Description

The NVMFD5C446NWFT1G is a high-performance, dual N-Channel Power MOSFET manufactured by onsemi, designed for applications requiring efficient power management and high current control. With a maximum drain-source voltage of 40V and a continuous drain current capability of 127A, it is well-suited for use in a wide range of power supply, motor control, and switching applications. The device features an ultra-low on-resistance of just 2.9mΩ, which significantly reduces conduction losses, thus improving overall system efficiency. Packaged in a compact and thermally enhanced footprint, the NVMFD5C446NWFT1G also offers excellent thermal performance, ensuring reliability and longevity even under high current and temperature conditions. This component is ideal for engineers looking to optimize power density and efficiency in their designs, particularly in the automotive, power management, and industrial sectors.

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