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NGTB20N120IHWG

Part No NGTB20N120IHWG
Manufacturer ON Semiconductor
Catalog IGBTs - Single
Description IGBT 20A 1200V TO-247 / IGBT Trench Field Stop 1200 V 40 A 341 W Through Hole TO-247-3
Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Category Discrete Semiconductor Products>Transistors - IGBTs - Single
Mfr onsemi
Package Tube
Product Status Obsolete
IGBT Type Trench Field Stop
Voltage - Collector Emitter Breakdown (Max) 1200 V
Current - Collector (Ic) (Max) 40 A
Current - Collector Pulsed (Icm) 80 A
Vce(on) (Max) @ Vge, Ic 2.65V @ 15V, 20A
Power - Max 341 W
Switching Energy 480µJ (off)
Input Type Standard
Gate Charge 150 nC
Td (on/off) @ 25°C -/170ns
Test Condition 600V, 20A, 10Ohm, 15V
Temperature Range - Operating -40°C ~ 175°C (TJ)
Mounting Type Through Hole
Package / Case TO-247-3
Supplier Device Package TO-247-3
Base Product Number NGTB20
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names ONSONSNGTB20N120IHWG,NGTB20N120IHWGOS,2156-NGTB20N120IHWG-ON
Standard Package 30
Win Source Part Number 1206888-NGTB20N120IHWG
Ultra Librarian 3D Model Ultra Librarian NGTB20N120IHWG CAD Model

Description

Introducing the NGTB20N120IHWG IGBT from ON Semiconductor

The NGTB20N120IHWG is a high-performance insulated gate bipolar transistor (IGBT) developed by ON Semiconductor, a leader in energy-efficient innovations. This powerful semiconductor device is designed to handle significant power levels and is commonly used in a variety of applications, including motor drives, uninterruptible power supplies (UPS), inverters, and switching power supplies.

Key Features

  • High Voltage Capability: The NGTB20N120IHWG offers a 1200V maximum collector-emitter voltage (VCE), making it suitable for high voltage applications.
  • High Current Rating: With a continuous collector current (IC) rating of 40A, this IGBT can handle high power levels.
  • Low On-State Voltage Drop: The device has a low VCE(on) which reduces on-state power loss, enhancing efficiency in applications.
  • High-Speed Switching: It features fast switching characteristics, enabling efficient operation at high frequencies.
  • Co-Packaged Diode: The NGTB20N120IHWG includes a free-wheeling diode co-packaged with the IGBT, which helps in reducing component count and simplifying circuit design.
  • Robustness: This IGBT is designed to be rugged and reliable, with a high tolerance for tough operating conditions.

Applications

The versatility of the NGTB20N120IHWG IGBT allows it to be used in a wide range of applications. Some of the typical uses include:

  • AC and DC motor drives
  • Renewable energy inverters (solar and wind)
  • Power factor correction circuits
  • Induction heating systems
  • Welding equipment

Quality and Reliability

ON Semiconductor is known for its commitment to quality, and the NGTB20N120IHWG is no exception. It is manufactured to meet the highest standards of reliability and performance, ensuring that it can withstand the rigors of demanding industrial environments.

In conclusion, the NGTB20N120IHWG IGBT from ON Semiconductor is an excellent choice for designers looking for a high-voltage, high-current, and energy-efficient solution for their power management needs. With its robust design and advanced features, this IGBT can help improve the performance and reliability of a wide array of electronic systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
14+ $4.4144 $61.8016
32+ $3.6221 $115.9072
50+ $3.5089 $175.4450
69+ $3.3957 $234.3033
88+ $3.2825 $288.8600
118+ $2.9429 $347.2622
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 7,130 pieces
MOQ: 14 pcs
Order Increment : 1 pcs
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