ON Semiconductor CPH5802-TB Field-Effect Transistor
The CPH5802-TB is a high-performance, N-Channel Field-Effect Transistor (FET) from ON Semiconductor, a leading provider in the semiconductor industry. This device is designed to meet the needs of various power management applications, offering a compact and efficient solution for electronic circuits.
Key Features
- Low On-Resistance: The CPH5802-TB boasts a very low on-resistance, which translates to reduced power loss and improved efficiency in applications where it is used.
- High-Speed Switching: Engineered for high-speed switching performance, this FET is ideal for applications requiring fast transition times.
- Low Gate Charge: With a low gate charge, the CPH5802-TB ensures minimal power consumption during the switching process, which is critical for power-sensitive designs.
- Enhanced Durability: The device is encapsulated in a robust package that provides excellent durability and reliability, ensuring a long operational lifespan even under demanding conditions.
Applications
The versatility of the CPH5802-TB allows it to be used in a wide range of applications, including but not limited to:
- Power Management Systems
- DC/DC Converters
- Motor Drives
- Load Switches
- Battery Management Circuits
Technical Specifications
| Parameter |
Value |
| Drain-Source Voltage (VDS) |
20V |
| Continuous Drain Current (ID) |
6A |
| Power Dissipation (PD) |
1.25W |
| Operating Temperature Range |
-55°C to +150°C |
With its advanced technology and ON Semiconductor's commitment to quality, the CPH5802-TB is a reliable and cost-effective choice for designers looking to optimize their power management systems.