Introducing the CPH5801 N-Channel MOSFET by ON Semiconductor

The CPH5801 is a high-performance N-Channel MOSFET designed and manufactured by ON Semiconductor, a leader in energy-efficient innovations. This MOSFET is a testament to ON Semiconductor's commitment to providing advanced power management solutions that meet the needs of a wide range of electronic applications.

Key Features

• Low On-Resistance: The CPH5801 boasts an exceptionally low on-resistance (R_DS(on)), which translates to reduced conduction losses and improved overall efficiency in application circuits.
• High-Speed Switching: Engineered for rapid switching, this MOSFET is ideal for high-frequency power switching applications, contributing to performance improvements in power supplies and converters.
• High Drain-Source Voltage: With a high V_DSS rating, the CPH5801 can handle significant voltage levels, making it suitable for a variety of demanding tasks.
• Low Threshold Voltage: The low gate threshold voltage ensures that the MOSFET can be controlled at lower voltages, which is beneficial for low-power applications and helps in reducing power consumption.

Applications

The CPH5801 MOSFET is versatile and can be employed in numerous applications, including:

• DC/DC converters
• Power management systems
• Motor control circuits
• Load switching
• High-efficiency power supplies

Product Specifications

This MOSFET features a compact package and is designed with the following specifications:

• Package: CPH
• Drain-Source Voltage (V_DSS): 60V
• Continuous Drain Current (I_D): 6.5A
• Power Dissipation (P_D): 1.25W
• Operating Temperature Range: -55°C to +150°C

With its robust design and reliable performance, the CPH5801 is an excellent choice for designers and engineers looking to optimize their power management systems. ON Semiconductor's dedication to quality ensures that this MOSFET will deliver consistent performance, making it a solid addition to any electronic design project.