ON Semiconductor CE1H100M7CANG - High-Performance MOSFET
The CE1H100M7CANG is a state-of-the-art N-Channel MOSFET brought to you by ON Semiconductor, a leading name in the field of power and signal management, logic, discrete, and custom devices. This MOSFET is designed to meet the demands of a wide range of applications, offering high efficiency, reliability, and performance.
Key Features
- Low On-Resistance: The CE1H100M7CANG features an extremely low on-resistance (RDS(on)), which translates to reduced conduction losses and improved power efficiency in applications.
- High Current Capability: With its ability to handle high current, this MOSFET is ideal for power-intensive applications, ensuring robust performance even under strenuous conditions.
- High-Speed Switching: Designed for fast switching applications, the CE1H100M7CANG minimizes switching losses, making it suitable for high-frequency power conversion systems.
- Robust Thermal Performance: The device boasts excellent thermal characteristics, ensuring stable operation over a wide temperature range.
- Environmentally Friendly: ON Semiconductor is committed to environmental stewardship, and the CE1H100M7CANG is no exception. It is RoHS compliant, minimizing the environmental impact by avoiding the use of hazardous substances.
Applications
The versatility of the CE1H100M7CANG MOSFET makes it suitable for a variety of applications, including:
- Power Supply Units (PSUs)
- DC-DC Converters
- Motor Drives
- Automotive Applications
- Power Management Solutions
Technical Specifications
The CE1H100M7CANG boasts impressive technical specifications that make it a top choice for engineers and designers:
- Drain-to-Source Voltage (VDSS): 100V
- Continuous Drain Current (ID): 169A
- Power Dissipation (PD): 125W
- Operating Temperature Range: -55°C to 175°C
- Package: TO-247-3
With its robust design and advanced features, the ON Semiconductor CE1H100M7CANG MOSFET is a reliable and efficient solution for high-performance electronic circuits.