ON Semiconductor CAT28C64BJ-20 EEPROM
The CAT28C64BJ-20 is a high-performance 64-kilobit parallel Electrically Erasable Programmable Read-Only Memory (EEPROM) component produced by ON Semiconductor. This device offers a robust storage solution for applications that require data retention without power and the flexibility to update memory contents during the product's lifecycle.
Key Features:
- Memory Capacity: The device boasts a 64Kb (8K x 8) memory size, providing ample space for firmware storage, configuration parameters, or any data that needs to be preserved across power cycles.
- Fast Access Time: With an access time of 200 nanoseconds, the CAT28C64BJ-20 ensures quick data retrieval, making it suitable for high-performance computing systems that cannot afford delays.
- Programming Voltage: It operates at a programming voltage of 5V, which is compatible with many microcontrollers and digital systems, facilitating easy integration into existing designs.
- Low Power Consumption: The EEPROM is designed for low power consumption, making it an ideal choice for battery-operated devices and energy-conscious applications.
- Endurance: It offers a high write endurance, capable of withstanding 100,000 program/erase cycles, ensuring reliable performance over the product's lifespan.
- Data Retention: Data retention is guaranteed for a minimum of 100 years, providing long-term data security and stability.
- Package: The device is available in a 28-pin JEDEC standard plastic DIP, which is conducive to easy handling and standard PCB layouts.
- Temperature Range: It operates over an industrial temperature range of -40°C to +85°C, making it robust enough for demanding environments.
Applications:
The CAT28C64BJ-20 is versatile and can be used in a variety of applications, including:
- Industrial control systems
- Telecommunication infrastructure
- Automotive electronics
- Medical devices
- Consumer electronics
ON Semiconductor's commitment to quality and reliability makes the CAT28C64BJ-20 a trusted choice for designers and engineers looking for a non-volatile memory solution that combines high capacity with durability and ease of use.