ON Semiconductor CAT24C256YE-GT3 EEPROM
The CAT24C256YE-GT3 is a high-performance, 256-Kb Serial CMOS EEPROM (Electrically Erasable Programmable Read-Only Memory) device from ON Semiconductor. It's designed for a wide range of applications that require low-power and high endurance non-volatile memory solutions. This EEPROM device is particularly suitable for advanced, flexible and reliable data storage in industrial, automotive, and consumer electronics sectors.
Key Features
- Memory Size: 256-Kb (32,768 x 8)
- Interface Type: I²C (Two-Wire Serial Interface)
- Speed: Supports Standard and Fast I²C Protocol
- Write Cycle Time: 5 ms (typical)
- Voltage Range: 1.7V to 5.5V
- Operating Temperature: -40°C to +85°C
- Packaging: TSSOP-8
- Hardware Write Protection: Pin-controlled protection for the entire memory array
Performance and Reliability
The CAT24C256YE-GT3 EEPROM boasts a self-timed write cycle, including auto-erase and auto-write functionalities, which significantly simplifies usage. It offers a high write endurance of 1,000,000 cycles and a data retention period of over 100 years, ensuring reliability over an extended period. The device's low-power design makes it an ideal choice for battery-operated and power-sensitive applications.
Applications
Due to its robust feature set and wide voltage range, the CAT24C256YE-GT3 is versatile and can be used in various applications, such as:
- Portable consumer devices
- Industrial control systems
- Medical devices
- Automotive systems
- Smart cards and identification systems
Easy Integration
This EEPROM device is available in a space-saving TSSOP-8 package, making it easy to integrate into a variety of design layouts. Its I²C interface ensures compatibility with most microcontrollers and processors, facilitating simple and efficient design-in processes.
Overall, the CAT24C256YE-GT3 from ON Semiconductor is a reliable and flexible solution for designers looking to incorporate non-volatile memory into their systems with minimal overhead and maximum ease of use.