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BUV26G

Part No BUV26G
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single
Description Switchmode Series NPN Silicon Power Transistor
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Tube
Transistor Type NPN
Current - Collector (Ic) (Maximum) 20A
Voltage - Collector Emitter Breakdown (Maximum) 90V
Vce Saturation (Maximum) @ Ib, Ic 1.5V @ 1.2A, 12A
Power - Max 85W
Operating Temperature Range -65°C ~ 175°C (TJ)
Mounting Style Through Hole
Package TO-220-3
Manufacturer Package TO-220AB
Win Source Part Number 1156366-BUV26G
Manufacturer Homepage www.onsemi.com
Popularity Medium
Supply and Demand Status Limited
Family Name BUV26
Introduction Date May 20, 2002
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date Obsolete
Ultra Librarian 3D Model Ultra Librarian BUV26G CAD Model

Description

ON Semiconductor BUV26G NPN Transistor

The BUV26G is a high-performance NPN transistor from ON Semiconductor, designed to cater to a wide array of power switching applications and high-speed amplification. This robust semiconductor device is highly regarded for its efficiency and reliability, making it an excellent choice for professionals in the electronics industry.

Key Features

  • High Voltage Capability: The BUV26G is capable of handling high voltage operations, with a VCEO (Collector-Emitter Voltage) of 400V, which makes it suitable for high voltage power supplies and lighting systems.
  • High Current Handling: With a continuous collector current (IC) rating of up to 10A, this transistor can easily manage significant current loads, proving useful in power amplification and switching.
  • Low Saturation Voltage: The device exhibits low collector-emitter saturation voltage, ensuring more efficient operation by minimizing power loss during switching.
  • Fast Switching Speeds: BUV26G offers fast switching speeds, a critical feature for applications that require rapid transitions between on and off states.
  • Robust Design: ON Semiconductor has engineered the BUV26G with a rugged design, which includes a fully isolated mounting base of 2.5kV for enhanced electrical isolation and safety.

Applications

The BUV26G transistor is versatile and can be used in a variety of applications, including:

  • Switching regulators
  • Motor controls
  • Inverters
  • Power amplifiers
  • Deflection circuits in CRT displays

Quality and Reliability

ON Semiconductor is known for its commitment to quality, and the BUV26G is no exception. It is built to meet stringent standards, ensuring high reliability and performance consistency. Whether for industrial, commercial, or consumer applications, this transistor is designed to deliver top-notch performance and withstand the rigors of intense electrical environments.

The BUV26G from ON Semiconductor represents a blend of innovation, performance, and reliability, making it a prime choice for engineers and designers looking for a dependable power transistor for their demanding applications.

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