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BDW46G

Part No BDW46G
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single
Description Darlington Complementary Silicon Power Transistors
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Tube
Transistor Type PNP - Darlington
Current - Collector (Ic) (Maximum) 15A
Voltage - Collector Emitter Breakdown (Maximum) 80V
Vce Saturation (Maximum) @ Ib, Ic 3V @ 50mA, 10A
Current - Collector Cutoff (Maximum) 2mA
DC Current Gain (hFE) (Minimum) @ Ic, Vce 1000 @ 5A, 4V
Power - Max 85W
Frequency - Transition 4MHz
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Style Through Hole
Package TO-220-3
Manufacturer Package TO-220AB
Win Source Part Number 1152993-BDW46G
Manufacturer Homepage www.onsemi.com
Popularity Medium
Supply and Demand Status Limited
Family Name BDW46
Introduction Date August 31, 1995
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2025
Ultra Librarian 3D Model Ultra Librarian BDW46G CAD Model

Description

ON Semiconductor BDW46G Bipolar Transistor

The ON Semiconductor BDW46G is a high-power bipolar transistor that serves a wide range of applications requiring robust performance in a PNP configuration. This device is designed to deliver reliable and efficient power control and amplification, making it an ideal choice for demanding environments.

Key Features

  • High Voltage Capability: The BDW46G is capable of withstanding up to 80V collector-emitter voltage (VCEO), providing a comfortable margin for applications operating at higher voltages.
  • High Current Handling: With a continuous collector current (IC) rating of up to 15A, this transistor can handle significant power loads, suitable for a variety of power amplification tasks.
  • Complementary PNP Type: The BDW46G is a PNP transistor, which can be used in conjunction with NPN types to create push-pull amplifier configurations, offering greater efficiency in driving loads.
  • Low Saturation Voltage: The device features low collector-emitter saturation voltage, reducing power loss and improving efficiency during operation.
  • Robust Thermal Performance: With a maximum junction temperature of 150°C, the BDW46G is built to operate reliably in thermally challenging situations.

Applications

The BDW46G is versatile enough to be used in a variety of applications, including:

  • Power regulation modules
  • Audio amplifiers
  • Switching circuits
  • Motor control systems
  • Linear power supplies

Product Specifications

Parameter Value
Collector-Emitter Voltage (VCEO) 80V
Collector Current (IC) 15A
Collector-Emitter Saturation Voltage Low
Maximum Junction Temperature (TJ) 150°C
Configuration PNP

With its robust design and reliable performance, the ON Semiconductor BDW46G is a great choice for professionals seeking a high-quality PNP bipolar transistor for their power control and amplification needs.

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