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BD442G

Part No BD442G
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single
Description Plastic Medium Power Silicon PNP Transistor
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Bulk
Transistor Type PNP
Current - Collector (Ic) (Maximum) 4A
Voltage - Collector Emitter Breakdown (Maximum) 80V
Vce Saturation (Maximum) @ Ib, Ic 800mV @ 300mA, 3A
Current - Collector Cutoff (Maximum) 100μA (ICBO)
DC Current Gain (hFE) (Minimum) @ Ic, Vce 40 @ 500mA, 1V
Power - Max 36W
Frequency - Transition 3MHz
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Style Through Hole
Package TO-225AA, TO-126-3
Manufacturer Package TO-225AA
Win Source Part Number 1152632-BD442G
Manufacturer Homepage www.onsemi.com
Popularity Medium
Supply and Demand Status Limited
Application Field Used in Industrial
Family Name BD442
Introduction Date August 31, 1995
ECCN EAR99
Country of Origin China, Morocco
Halogen Free Compliant
Estimated EOL Date 2023
Ultra Librarian 3D Model Ultra Librarian BD442G CAD Model

Description

The BD442G is a PNP bipolar junction transistor (BJT) designed and manufactured by ON Semiconductor, a leading provider of semiconductor-based solutions. This transistor is a medium-power device that is commonly used in amplification and switching applications. The BD442G is characterized by its high current capacity and low voltage operation, making it an ideal choice for a variety of electronic circuits.

Key Features:

  • PNP Transistor Type: The BD442G is a PNP transistor, which means it is turned on when a small current flows through the base in the opposite direction to the current flow in the emitter-collector path.
  • Power Dissipation: With a power dissipation of up to 65 watts, the BD442G can handle significant levels of power, making it suitable for medium-power applications.
  • Collector-Emitter Voltage: It has a collector-emitter voltage (VCEO) of -80V, which indicates the maximum voltage the transistor can withstand when the base is open.
  • Collector Current: The BD442G can support a collector current (IC) of up to -4A, allowing for the control of high current loads.
  • DC Current Gain: It features a high DC current gain (hFE) range, which means it can amplify a small input current into a much larger output current, making it efficient in amplification applications.

Applications:

The BD442G transistor is versatile and can be used in a wide range of applications. It is often found in:

  • Power regulators
  • Audio amplifiers
  • Signal processing
  • Switching circuits
  • Driver stages in high-fidelity amplifiers and television circuits

Quality and Reliability:

ON Semiconductor is known for their commitment to quality and reliability, and the BD442G is no exception. It is designed to meet the stringent requirements of the electronic industry, ensuring stable performance and a long operational life for the products it is used in.

Environmental Impact:

Compliant with RoHS and other environmental standards, the BD442G reflects ON Semiconductor's dedication to environmental sustainability and reducing the ecological footprint of their products.

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