The BAS70H.115 is a high-performance Schottky barrier diode designed by NXP Semiconductors, known for its low forward voltage drop and fast switching capabilities. This diode is housed in a compact SOD123F package, making it suitable for high-density circuit board applications where space is at a premium.
Key Features
- Low Forward Voltage: The BAS70H.115 exhibits a low forward voltage, which enhances energy efficiency by minimizing power loss during operation.
- Fast Switching Speed: With its fast switching action, this diode is ideal for high-frequency applications, ensuring minimal signal delay and high efficiency in circuits.
- Low Capacitance: The device has a low diode capacitance, which is beneficial for high-speed switching and applications requiring low noise levels.
- Surface-Mount Package: The SOD123F package allows for efficient assembly in automated surface-mount technology (SMT) production lines, facilitating mass production and reliability.
Applications
The BAS70H.115 is versatile and can be used in a variety of applications, including:
- High-speed switching circuits
- Power supply management
- Protection circuits
- Voltage clamping
- Reverse polarity protection
Electrical Characteristics
With a continuous reverse voltage of 70V and a forward current of up to 70mA, the BAS70H.115 is capable of handling moderate power levels. Its forward voltage drop is typically around 410 mV at 15 mA, which allows for efficient operation. The diode also features a maximum reverse leakage current of 2 µA at 70V, ensuring minimal current loss when in the off state.
Quality and Reliability
NXP Semiconductors is committed to delivering high-quality products, and the BAS70H.115 is no exception. It is designed to meet stringent industry standards, offering reliability and performance for critical electronic applications.
Ordering Information
To order or inquire about the BAS70H.115, please refer to its complete part number and contact an authorized NXP distributor or visit the NXP website for direct purchase options.