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Same model may have multiple batches, images only for reference.
2SC1969 Mitsubishi
Same model may have multiple batches, images only for reference.

2SC1969

Part No 2SC1969
Manufacturer Mitsubishi
Catalog Hard To Find
Description NPN EPITAXIAL PLANAR TYPE(for RF power amplifiers on HF band Mobile radio applications)
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

RoHS State Request Verification
Manufacturer Mitsubishi
Win Source Part Number 1125163-2SC1969
Manufacturer Homepage www.mitsubishichips.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian 2SC1969 CAD Model

Description

The Mitsubishi 2SC1969 is a silicon NPN epitaxial planar transistor designed for use in high-power linear RF amplifier applications.

  • Maximum Collector Power Dissipation: 12.5 W
  • Maximum Collector Current: 4 A
  • Package: TO-220 package

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