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HMC659LC5TR

Part No HMC659LC5TR
Manufacturer Analog Devices Inc.
Catalog RF Amplifiers
Description IC MMIC PWR AMP GAAS 32SMD / RF Amp Single Power Amp 15GHz 9V 32-Pin CQFN EP T/R
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Categories RF/IF and RFID
Manufacturer Analog Devices Inc.
Packaging Reel package
Frequency 0Hz ~ 15GHz
P1dB 27.5dBm
Gain 19dB
Noise Figure 2.5dB
RF Type General
Operating Supply Voltage 8V
Operating Supply Current 300mA
Package 32-TFCQFN Exposed Pad
Manufacturer Package 32-CSMT (5x5)
Win Source Part Number 776141-HMC659LC5TR
Popularity Medium
Supply and Demand Status Limited
Family Name HMC659LC5
Introduction Date October 24, 2007
ECCN EAR99
Country of Origin United States of America
Estimated EOL Date 2031
Ultra Librarian 3D Model Ultra Librarian HMC659LC5TR CAD Model

Description

Product Overview: HMC659LC5TR by Analog Devices Inc.

The HMC659LC5TR is a high-performance, gallium arsenide (GaAs) pseudomorphic high electron mobility transistor (pHEMT) monolithic microwave integrated circuit (MMIC) distributed amplifier, designed and manufactured by the renowned Analog Devices Inc. This state-of-the-art component is tailored for a wide range of applications, including test instrumentation, defense, space, and broadband communications.

With an operating frequency range from DC to 28 GHz, the HMC659LC5TR offers a broad spectrum of utility for RF and microwave systems. It provides exceptional gain flatness and a high output power that ensures signal integrity across various frequencies. This makes it an ideal choice for designers looking to enhance system performance while maintaining signal fidelity.

The amplifier boasts an impressive gain of 15 dB with a +28 dBm output power at 1 dB compression point (P1dB). The output IP3 is +38 dBm, highlighting the device's ability to handle high power levels without compromising linearity. These specifications demonstrate the HMC659LC5TR's capability to amplify weak signals with minimal distortion, making it suitable for demanding environments where signal clarity is paramount.

Housed in a compact 5x5 mm surface-mount leadless chip carrier (LC5) package, the HMC659LC5TR is designed for easy integration into various circuit topologies. Its small footprint enables designers to save valuable board space without sacrificing performance. Additionally, the device features an all-positive bias scheme, simplifying the biasing network and reducing external component requirements.

Reliability is key in high-stakes applications, and the HMC659LC5TR delivers on this front. It is fabricated using Analog Devices' robust and proven GaAs pHEMT process, ensuring consistent performance and longevity. Whether for commercial or military use, this amplifier is built to meet the stringent quality standards expected of Analog Devices products.

In summary, the HMC659LC5TR from Analog Devices Inc. is a versatile and reliable distributed amplifier that provides outstanding performance for a variety of high-frequency applications. Its combination of wide bandwidth, high gain, and compact design makes it an excellent choice for engineers and designers seeking to enhance their RF and microwave systems.

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